IndiumV3, Main, Repository, bibRecord, 014966

Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE

Identifieur interne : 014966 ( Main/Repository ); précédent : 014965; suivant : 014967

Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE

Auteurs : RBID : Pascal:99-0297732

Descripteurs français

Pascal (Inist)
- Simulation, Diffusion(transport), Matériau semiconducteur, Indium phosphure, Indium arséniure, Gallium arséniure, Gallium phosphure, Phosphoarséniure, Composé quaternaire, Méthode GSMBE, Addition béryllium, SIMS, 6630J, InGaAsP:Be, As Ga In P.
Wicri :
- concept : Simulation.

English descriptors

KwdEn :
- Arsenides phosphides, Beryllium additions, Diffusion, GSMBE method, Gallium arsenides, Gallium phosphides, Indium arsenides, Indium phosphides, Quaternary compounds, SIMS, Semiconductor materials, Simulation.

Abstract

Be diffusion in InGaAsP quaternary alloys lattice matched to InP by gas source molecular beam epitaxy (GSMBE) was studied using Secondary Ion Mass Spectrometry (SIMS). The experimental structures consisted of a 0.2 μm Be-doped (3 × 10¹⁹ cm^-3) In_0.73Ga_0.27As_0.58P_0.4 epilayer sandwiched between two 0.5 μm undoped In_0.73Ga_0.27As_0.58P_0.42 epilayers. The samples were subjected to rapid thermal annealing (RTA) in the temperature range from 700°C to 900°C with time durations of 10-240 s. Be diffusion was simulated, in order to obtain the best agreements with experimental profiles, according to two kick-out models: the first model using neutral Be interstitials and singly positively charged (Ga, In) self-interstitials, and the second model using singly positively charged Be interstitials and doubly positively charged Ga, In self-interstitials. Comparison with experimental data shows that the first kick-out model gives a better description.

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Pascal:99-0297732

Le document en format XML

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<author><name sortKey="Koumetz, S" uniqKey="Koumetz S">S. Koumetz</name>
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<s2>76821 Mont Saint Aignan</s2>
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<orgName type="university">Université de Rouen</orgName>
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<author><name sortKey="Ketata, K" uniqKey="Ketata K">K. Ketata</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>LEMI-IUT Université de Rouen, rue Lavoisier</s1>
<s2>76821 Mont Saint Aignan</s2>
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<author><name sortKey="Ketata, M" uniqKey="Ketata M">M. Ketata</name>
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<author><name sortKey="Marcon, J" uniqKey="Marcon J">J. Marcon</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>LEMI-IUT Université de Rouen, rue Lavoisier</s1>
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<term>Gallium arsenides</term>
<term>Gallium phosphides</term>
<term>Indium arsenides</term>
<term>Indium phosphides</term>
<term>Quaternary compounds</term>
<term>SIMS</term>
<term>Semiconductor materials</term>
<term>Simulation</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Simulation</term>
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<term>Matériau semiconducteur</term>
<term>Indium phosphure</term>
<term>Indium arséniure</term>
<term>Gallium arséniure</term>
<term>Gallium phosphure</term>
<term>Phosphoarséniure</term>
<term>Composé quaternaire</term>
<term>Méthode GSMBE</term>
<term>Addition béryllium</term>
<term>SIMS</term>
<term>6630J</term>
<term>InGaAsP:Be</term>
<term>As Ga In P</term>
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<front><div type="abstract" xml:lang="en">Be diffusion in InGaAsP quaternary alloys lattice matched to InP by gas source molecular beam epitaxy (GSMBE) was studied using Secondary Ion Mass Spectrometry (SIMS). The experimental structures consisted of a 0.2 μm Be-doped (3 × 10<sup>19</sup>
 cm<sup>-3</sup>
) In<sub>0.73</sub>
Ga<sub>0.27</sub>
As<sub>0.58</sub>
P<sub>0.4</sub>
 epilayer sandwiched between two 0.5 μm undoped In<sub>0.73</sub>
Ga<sub>0.27</sub>
As<sub>0.58</sub>
P<sub>0.42</sub>
 epilayers. The samples were subjected to rapid thermal annealing (RTA) in the temperature range from 700°C to 900°C with time durations of 10-240 s. Be diffusion was simulated, in order to obtain the best agreements with experimental profiles, according to two kick-out models: the first model using neutral Be interstitials and singly positively charged (Ga, In) self-interstitials, and the second model using singly positively charged Be interstitials and doubly positively charged Ga, In self-interstitials. Comparison with experimental data shows that the first kick-out model gives a better description.</div>
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<fC01 i1="01" l="ENG"><s0>Be diffusion in InGaAsP quaternary alloys lattice matched to InP by gas source molecular beam epitaxy (GSMBE) was studied using Secondary Ion Mass Spectrometry (SIMS). The experimental structures consisted of a 0.2 μm Be-doped (3 × 10<sup>19</sup>
 cm<sup>-3</sup>
) In<sub>0.73</sub>
Ga<sub>0.27</sub>
As<sub>0.58</sub>
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 epilayer sandwiched between two 0.5 μm undoped In<sub>0.73</sub>
Ga<sub>0.27</sub>
As<sub>0.58</sub>
P<sub>0.42</sub>
 epilayers. The samples were subjected to rapid thermal annealing (RTA) in the temperature range from 700°C to 900°C with time durations of 10-240 s. Be diffusion was simulated, in order to obtain the best agreements with experimental profiles, according to two kick-out models: the first model using neutral Be interstitials and singly positively charged (Ga, In) self-interstitials, and the second model using singly positively charged Be interstitials and doubly positively charged Ga, In self-interstitials. Comparison with experimental data shows that the first kick-out model gives a better description.</s0>
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<s5>92</s5>
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Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE

Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri